Deposition

• Load lock.
• In-situ ellipsometric film monitor (Woollam MX2000 spectroscopic ellipsometer).
• ICP source configured for (NH₃, N₂, H₂ and O₂) or H₂O.
• Substrate temperature control from 25°C - 500°C.
• Configured with TMA, TDMAT, TDMASn and TDMAHf precursors for deposition of:
    - TiN, TiO₂, AlNx, Al₂O₃, HfOx, HfNx and SnOx films
• Maximum 200 mm substrate Ø.
• Maximum 5 mm substrate thickness.

• For Parylene-C or Parylene-N conformal coatings.
• 12" diameter × 12" tall deposition chamber.
• Rotating sample fixture.
• Maximum 150 mm Ø substrate.

• Open load chamber.
• Maximum 380°C substrate temperature.
• Mixed frequency deposition for stress control:
    - 300 W, 13.56 MHz
    - 500 W, tunable 100 - 460 kHz.
• Configured with 2% SiH₄ in N₂, NH₃, N₂O, SF₆ and N₂ for deposition of:
    • SiNx, SiNxOy and SiO₂ films.
• Maximum 200 mm Ø substrate.

• High Density PECVD system
• Configured for O₂, Ar, SF₆, N₂, 100% SiH₄, H₂, CH₄, NH₃
• TEOS bubbler and dopant delivery for high-quality oxide
• Maximum 200 mm Ø substrate, with clamps for 100mm, 150mm and 200mm
• For formation of dense SiO₂ and SiN layers.

• Single tube oxidation furnace with 3-zone temperature control
• Up to x25 150 mm Ø wafers
• 3-loop gas system with water bubbler, including:
    - N₂, O₂ and N₂ carrier
• Frame mounted automatic boat loader
• PCMUX and TMX control system

• 6-position carrier load lock.
• KRI EH400 ion source for ion-beam assisted deposition using Ar + (N₂ or O₂)
• Advanced sample rotation with tilting stage.
• Substrate heating to 600°C
• Configured for Ti, Au, Pt, Ir, Al, Cu and Ni₀.₈Fe₀.₂
• Maximum 150 mm Ø samples using load-lock cassettes.
• Alternative open-load configuration using 'lift-off' dome for simultaneous coating of 5 × 100 mm Ø wafers with high uniformity.

• An 8-pocket (7cc) e-beam source
• Two high capacity (crucible) and two standard capacity (boat) thermal sources.
• A 2" RF sputter source, including reactive sputtering using Ar + (N₂ or O₂)
• KRI EH400 ion source for ion-beam assisted deposition using Ar + (N₂ or O₂)
• 200 mm-adjustable z-travel, substrate rotation and substrate heating up to 300°C.
• Maximum 200 mm substrate Ø, with carriers for:
    - Individual 200 mm or 150 mm wafers
    - Four, 3" wafers
    - Seven, 2" wafers
    - Lift-off dome for simultaneous deposition on up to five, 100 mm wafers
• Currently configured for Ag and Al (additional materials being commissioned)

• 8-pocket (7cc), manually indexed source.
• Configured for Ti, Au, Pt, Ag, Cu, Cr, Al, Ta.
    - Additional materials can be evaporated, including: Ni, SiO₂ and Ni₀.₈Fe₀.₂
• 8 kV Telemark TT-6 power supply & sweep controller.
• Telemark 861 deposition controller.
• Maximum 150 mm Ø substrate.

• Two high capacity (crucible) and four standard capacity (boat) thermal sources.
• 6 sources controlled in pairs, each with a dedicated QCM, for co-deposition
• KRI EH400 ion source for ion-beam assisted deposition using Ar
• Continual substrate rotation, including source-substrate indexing for constant throw distance.
• 200 mm-adjustable z-travel and substrate heating up to 300°C.
• Maximum 200 mm substrate Ø, with carriers for:
    - Five, 100 mm wafers
    - Sixteen, 2" wafers
    - Part pieces (including for individual 200 mm or 150 mm, or x4 ≤100 mm wafers).
• Currently configured for Ag and Al (additional materials being commissioned)

• Open-load (steel) bell jar chamber
• Dedicated to AuGeNi, AuGe, Ni and Au evaporation.
• Maximum 50 mm Ø substrate.

• Open load thermal evaporator.
• In-situ Ar plasma cleaning.
• Configured for Ti, Au, Al and Cr.
• Maximum 50 mm Ø substrate.

• Dedicated to AuGeNi Ohmic contact deposition.
• Maximum 50 mm Ø substrate.

• Two, 2" DC magnetrons.
• One, 2" RF (13.56 MHz) magnetron.
• Substrate rotation.
• Substrate heating to 350°C using rear quartz lamps.
• In-situ RF Ar plasma for pre-clean or ion-assisted deposition.
• Reactive deposition using O₂ or N₂ (via a separate MFC).
• Configured for Ti, Cu, Al, Au, Cr, Nb, Mo, Pd, SiO₂ and ZnO.
• Maximum 150 mm Ø substrate (best uniformity <75mm Ø).

• For Au coating of SEM samples.
• 57 mm Ø × 0.1 mm thick Au foil target.
• 25 mm to 80 mm adjustable throw distance.
• Film thickness monitor for automatic deposition control.