Lithography
Lithography capability
Our lithography capability is separated into optical lithography, electron beam lithography and ancillary equipment.
Electron-beam lithography
Jeol JBX-6300FS
• 100 kV Schottky electron source.
• Possible write field sizes include:
- High resolution mode: 62.5 µm field, with a minimum 0.125 nm step size.
- High speed mode: 500 µm field, with a minimum step size of 1 nm.
• Maximum 150 × 150 mm write area.
• Current tooling for 4", 3", 2" and 1" Ø wafers.
• Maximum 200 mm Ø wafer (150 mm Ø write area) possible with additional tooling.
• Possible write field sizes include:
- High resolution mode: 62.5 µm field, with a minimum 0.125 nm step size.
- High speed mode: 500 µm field, with a minimum step size of 1 nm.
• Maximum 150 × 150 mm write area.
• Current tooling for 4", 3", 2" and 1" Ø wafers.
• Maximum 200 mm Ø wafer (150 mm Ø write area) possible with additional tooling.
Optical lithography
Maskless lithography - Heidelberg instruments MLA150
• Minimum feature 1 µm (in S1805).
• Alignment overlay < 500 nm (3σ)
• Linewidth variation < 120 nm (3σ)
• Maximum 6” x 6” substrate size.
• Substrate thickness: 0.1 to 6 mm.
• Basic greyscale mode capability.
• Alignment overlay < 500 nm (3σ)
• Linewidth variation < 120 nm (3σ)
• Maximum 6” x 6” substrate size.
• Substrate thickness: 0.1 to 6 mm.
• Basic greyscale mode capability.
Mask aligner - EVG 610
• Current tooling for 50.8 mm, 71.2 mm and 100 mm Ø wafers.
- Can load 7” mask and 6” Ø substrates.
• Back side alignment using rear optics.
- Can load 7” mask and 6” Ø substrates.
• Back side alignment using rear optics.
Mask aligner - Karl Suss MJB-3 UV400 IR UV
• Alignment modes include:
- vacuum,
- contact
- proximity alignment
• IR camera for back-side alignment.
• Maximum 3” (71.2 mm) Ø substrate size
- vacuum,
- contact
- proximity alignment
• IR camera for back-side alignment.
• Maximum 3” (71.2 mm) Ø substrate size
Mask aligner - Karl Suss MJB-3 HP UV
• Alignment modes include:
- vacuum,
- contact
- proximity alignment
• Maximum 2” (50.8 mm) Ø substrate size
- vacuum,
- contact
- proximity alignment
• Maximum 2” (50.8 mm) Ø substrate size
Ancillary lithography equipment
Megasonic spin cleaner - ProSys MegPie Ztop 200
• 8" ProSys MegPie Ztop 200 megasonic head
• IMPulse 250 RF power supply
• POLOS Spin200 Advanced spinner.
• Configured with NH₄OH, DMSO and DI H₂O.
• Chucks available for 150 mm, 101 mm, 76.2 mm and 50.8 mm Ø wafers.
• Principal applications include:
- Post CMP cleaning (dilute NH₄OH).
- Lift-off in DMSO.
- General cleaning in DI H₂O.
• IMPulse 250 RF power supply
• POLOS Spin200 Advanced spinner.
• Configured with NH₄OH, DMSO and DI H₂O.
• Chucks available for 150 mm, 101 mm, 76.2 mm and 50.8 mm Ø wafers.
• Principal applications include:
- Post CMP cleaning (dilute NH₄OH).
- Lift-off in DMSO.
- General cleaning in DI H₂O.
Wet-bench integrated capability
• PCT megasonic cleaner for maximum 150 mm Ø wafers.
• ×4 Suss Lab6 spin coaters.
• ×2 132 kHz ultrasonic baths.
• DI H₂O weir rinse baths with integrated resistivity measurements.
• ×2 Temperature controlled water baths.
• ×4 Suss Lab6 spin coaters.
• ×2 132 kHz ultrasonic baths.
• DI H₂O weir rinse baths with integrated resistivity measurements.
• ×2 Temperature controlled water baths.
PDMS processing - standalone station
• Housed in a dedicated recirculating cabinet for process integrity, including:
- Dedicated Suss Labspin 6 spinner for up to 150 mm ∅ wafers.
- Integrated hotplate and wash station.
- Integrated Dry N₂ gun.
- Dedicated PPE.
- Dedicated Suss Labspin 6 spinner for up to 150 mm ∅ wafers.
- Integrated hotplate and wash station.
- Integrated Dry N₂ gun.
- Dedicated PPE.
Cold development - standalone station
• Housed in a dedicated recirculating cabinet for process integrity, including:
- Integrated hotplate and wash station.
- Integrated Dry N₂ gun.
- Integrated cold development bath with ± 2ºC temperature stability.
• Principle applications include cold development of e-beam resists.
- Integrated hotplate and wash station.
- Integrated Dry N₂ gun.
- Integrated cold development bath with ± 2ºC temperature stability.
• Principle applications include cold development of e-beam resists.