Dry etching

• Configured for BCl₃, SiCl₄, Cl₂, N₂, Ar, O₂ & SF₆.
• Load lock
• 1 kW, 2 MHz ICP source
• 300 W, 13.56 MHz bias supply.
• Helium backside wafer cooling.
• Intellimetrics Laser End Point Detection system with camera.
• Currently set up for maximum 100 mm Ø wafers.
    - System can be adapted to maximum 150 mm Ø wafers with re-configuration of the feature plate and clamp.
    - Compatible with piece parts (bonded to carrier wafer using vacuum grease).
• Compatible with III-V semiconductor materials, including GaAs / AlGaAs.
• Appropriate mask materials include:
    - Photoresists (e.g. S1800 series, AZ4000 series, AZ9000 series)
    - Metals, e.g. Ti, Cr
    - Insulators including SiO₂ SiN etc.

• Low pressure Hg vapour grid lamp
    - Average intensity 28 - 32 mW/cm² @ 235.7 nm, 3 - 5 mm from lamp
• Sample drawer dimensions: 350 × 220 mm, max. sample thickness 10 mm
• Used for substrate preparation, including to:
    - Remove resist residues
    - Clean organic contamination
    - Create hydrophillic surfaces on glasses and other materials
    - Grow thin oxide layers on silicon
    - Sterilize surfaces

• Deep-silicon reactive ion etcher
• Configured with SF₆ (high- and low-flow), O₂ (high- and low-flow), C₄F₈, Ar
• Maximum 200 mm Ø substrate, with clamps for 100mm, 150mm and 200mm
• BOSCH and cryogenic etching capability

• ICP-RIE for general purpose etching of e.g. silicon
• Configured for O₂, C₄F₈, CHF₃, SF₆, N₂, He, Ar, CF₄, H₂, HBr, Cl₂, NF₃
• Maximum 200 mm Ø substrate, with clamps for 100mm, 150mm and 200mm
• Intellimetrics LEPD
• Verity OES
• Low bias, pulsed mode for Atomic Layer Etching

• General purpose open-load RIE
• Configured for O₂, CHF₃, SF₆, N₂, Ar, CF₄, H₂, CH₄
• Maximum 200 mm Ø substrate
• For shallow etching of e.g. Si, SiO₂, SiN and polymers

• Load lock
• 2.45 GHz circular ion beam ECR microwave plasma source
• 218 mm beam diameter
• 200 to 2000 eV ion energy
• 3 x N-3DC plasma bridge neutralizers
• SIMS end-point detection (Hiden Analytical)
• Helium back-side cooling
• Water / peltier temperature control
• Ar etch (physical)
• Reactive IBE (RIBE) or Chemically Assisted IBE (CAIBE) using CHF₃, O₂, BCl₃ or Cl₂
• Configured for 100 mm Ø wafers (can be increased to 150 mm Ø)

• Configured for O₂ or N₂ plasma processes.
• Maximum 50 mm Ø substrate.
• Accepts piece-parts.
• NB: Thick polymer films / materials will burn.

• Configured for O₂ or N₂ plasma processes.
• Maximum 100 mm Ø substrate.
• Accepts piece-parts.
• NB: Thick polymer films / materials will burn.