Packaging and bonding
Packaging and Bonding
Bonding capabilities are separated into electrical (wire bonding) and device/ wafer bonding.
Wire bonding
Wire bonder - TPT HB16 multi-wire
• HB16 Thermosonic wire bonder for wedge, ball, ribbon and bump bonding
• Supports:
- 17 µm - 75 µm diameter Au wire
- 27 µm - 75 µm diameter Al wire
- Max. 25 x 250 μm ribbon
• Semi-auto and manual operation modes
• Individual bonding parameter control for 1st and 2nd bonds, including:
- High Q 63.3kHz transducer PLL ultrasonic generator for 0 - 10 W US power
- 0 - 20,000 ms bond time
- 5 - 150cN bond force
• 160 x 160mm bond area with:
- 10 mm fine table motion (6:1 chessman: stage controlled or using motorized y)
- 17 mm z-travel (manual and motorized)
• Rotatable, heated work stage up to 250 ± 1°C
• Supports:
- 17 µm - 75 µm diameter Au wire
- 27 µm - 75 µm diameter Al wire
- Max. 25 x 250 μm ribbon
• Semi-auto and manual operation modes
• Individual bonding parameter control for 1st and 2nd bonds, including:
- High Q 63.3kHz transducer PLL ultrasonic generator for 0 - 10 W US power
- 0 - 20,000 ms bond time
- 5 - 150cN bond force
• 160 x 160mm bond area with:
- 10 mm fine table motion (6:1 chessman: stage controlled or using motorized y)
- 17 mm z-travel (manual and motorized)
• Rotatable, heated work stage up to 250 ± 1°C
Ball bonder - K&S 4254
• Supports 17.5 µm - 76 µm diameter Au wire
• Semi-auto and manual operation modes
• Individual bonding parameter control for 1st and 2nd bonds, including:
- High Q 60kHz transducer PLL ultrasonic generator for 1.3 - 2.5 W US power
- 10 - 100 ms/10 - 1000 ms bond time
- 10 - 160g force coil
• Programmable NEFO system
• 152 x 152mm bond area with:
- 14 mm fine table motion (Chessman controlled)
- 6:1 chessman: stage movement ratio
- 9.1 mm z-travel
• Heated work stage up to 250 ± 5°C
• Semi-auto and manual operation modes
• Individual bonding parameter control for 1st and 2nd bonds, including:
- High Q 60kHz transducer PLL ultrasonic generator for 1.3 - 2.5 W US power
- 10 - 100 ms/10 - 1000 ms bond time
- 10 - 160g force coil
• Programmable NEFO system
• 152 x 152mm bond area with:
- 14 mm fine table motion (Chessman controlled)
- 6:1 chessman: stage movement ratio
- 9.1 mm z-travel
• Heated work stage up to 250 ± 5°C
Wedge bonder - K&S 4123
• Supports:
- 12.7 µm - 76 µm diameter Au wire (standard configuration)
- 20 µm - 76 µm diameter Al wire
• Semi-auto and manual operation modes
• Individual bonding parameter control for 1st and 2nd bonds, including:
- High Q 60kHz transducer PLL ultrasonic generator for 1.3 - 2.5 W US power
- 10 - 100 ms bond time
- 10 - 160 g force coil
• Programmable NEFO system
• 134 x 134mm bond area with:
- 14 mm fine table motion with 6:1 chessman: stage movement ratio
- 6.6 mm z-travel
• Rotatable, heated work stage up to 250 ± 5°C
- 12.7 µm - 76 µm diameter Au wire (standard configuration)
- 20 µm - 76 µm diameter Al wire
• Semi-auto and manual operation modes
• Individual bonding parameter control for 1st and 2nd bonds, including:
- High Q 60kHz transducer PLL ultrasonic generator for 1.3 - 2.5 W US power
- 10 - 100 ms bond time
- 10 - 160 g force coil
• Programmable NEFO system
• 134 x 134mm bond area with:
- 14 mm fine table motion with 6:1 chessman: stage movement ratio
- 6.6 mm z-travel
• Rotatable, heated work stage up to 250 ± 5°C
Device and wafer bonding
Die bonder - Fineplacer lambda 2
• Semi-automatic die bonder for 0.03 to 20 mm die sizes.
• 0.5 µm alignment accuracy.
• Force range 0.2 - 400 N.
• Bonding modes include:
- Epoxy bonding: component dip and adhesive transfer from Gelpack dispenser.
- UV curable bonding.
- Thermocompression bump bonding, including using heated head and/or heated substrate
• Form generator software for face up assembly without a glass mask.
• 0.5 µm alignment accuracy.
• Force range 0.2 - 400 N.
• Bonding modes include:
- Epoxy bonding: component dip and adhesive transfer from Gelpack dispenser.
- UV curable bonding.
- Thermocompression bump bonding, including using heated head and/or heated substrate
• Form generator software for face up assembly without a glass mask.
Wafer bonder - AML AWB aligner
• Maximum applied voltage: 2.5 kV.
• Maximum force: 25 kN.
• Maximum temperature: 560 °C.
• 1 bar overpressure possible.
• IR and Visible alignment optics.
• X, Y, theta movement of bottom substrate.
• Top chuck tooling for:
- 100 mm Ø and 3” Ø wafers.
- 1 cm2 part pieces.
• Vapour injection for formic acid (for Cu-Cu bonding).
• Maximum 100 mm Ø substrate size.
• Maximum force: 25 kN.
• Maximum temperature: 560 °C.
• 1 bar overpressure possible.
• IR and Visible alignment optics.
• X, Y, theta movement of bottom substrate.
• Top chuck tooling for:
- 100 mm Ø and 3” Ø wafers.
- 1 cm2 part pieces.
• Vapour injection for formic acid (for Cu-Cu bonding).
• Maximum 100 mm Ø substrate size.